IGBT Power Module MG50J6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT
Description
IGBT Power Module
Quick Detail:
TOSHIBA GTR Module Silicon N Channel IGBT
Description:
High Power Switching Applications
Motor Control Applications
Applications:
[1]The electrodes are isolated from case.
[1]High input impedance.
[1]6 IGBTs built into 1 package.
[1]Enhancement-mode.
[1]High speed : tf = 0.30µs (Max.) (IC = 50A)
trr = 0.15µs (Max.) (IF = 50A)
[1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 50A)
Specifications:
|
part no. |
MG50J6ES40 |
|
Manufacturer |
TOSHIBA |
|
supply ability |
10000 |
|
datecode |
10+ |
|
package |
MODULE |
|
remark |
new and original stock |
Competitive Advantage:
Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .
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